Dry Etching
Barrel Asher
Branson/IPC
Standard Operating Procedure
Description:
Low Temperature Isotropic Etcher
Features:
13.56 MHz RF Generator 500 W max
Quartz process chamber 10" dia. x 20" deep
Supported Gasses: CF4 & O2
Base Pressure: 60 mTorr
Reactive Ion Etcher
Samco RIE-1C
Standard Operating Procedure
Description:
N/A
Features:
Operating Requency: 13.56 MHz
Maximum Power: 200 Watts
Supported gases: CF4, Ar, O2, H2
Reactive Ion Etcher with Inductively Coupled Plasma
Trion MiniLock II RIE-ICP
Standard Operating Procedure
Description:
N/A
Features:
He substrate cooling
Supported gasses: O2,CF4,Ar, H2,CH4
Water cooled RF
600 W
13.56 MHz
Labview interface
Load Lock
Deep Reactive Ion Etching
STS
Description:
N/A
Features:
Inductively Coupled Plasma Processes
Unit with load lock
Bosch Process
Supported gasses: SF6, C4F8, Ar, O2, CF4